CS4N70FA9D Datasheet, MOSFET, Huajing Microelectronics

Download (Size : 930.18KB)

CS4N70FA9D Features and benefits

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 15nC) l Low Reverse transfer capacitances(Typical: 9pF) l 100% Single Pulse avalanche energy .

CS4N70FA9D Application

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS4N70FA9D Description

CS4N70F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow.

Image gallery